PDD4912-1 mosfet equivalent, n-channel mosfet.
* 40V,23A, RDS(ON) =30mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* 100% PB free and Green Device Available
Appli.
TO252 Pin Configuration
D
S G
G
D S
BVDSS 40V
RDSON 30m
ID 23A
Features
* 40V,23A, RDS(ON) =30mΩ@VGS = 10.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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